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Galvanomagnetic Properties of Zn x Hg 1− x Te Solid Solutions
Author(s) -
Niculescu D.,
Dziuba E. Z.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690310203
Subject(s) - hall effect , electrical resistivity and conductivity , solid solution , conductivity , analytical chemistry (journal) , band gap , magnetic field , materials science , condensed matter physics , chemistry , physics , metallurgy , chromatography , quantum mechanics
An investigation is made of the electrical conductivity and the Hall coefficient of Zn x Hg 1− x Te system with x = 0 and x = 0.2 as a function of the temperature and magnetic field in the ranges 77 to 400 °K and 250 to 1000 Gs, respectively. An effect of the “heavy carriers” on the galvanomagnetic properties is found. The additional conductivity due to these “carriers” has a temperature independent value. The energy gap for HgTe is estimated to E g = −0.27 eV and E g = −0.16 eV at the temperatures 77 and 300°K, respectively.