Galvanomagnetic Properties of Zn  x  Hg 1− x  Te Solid Solutions | Zendy

Niculescu D. | Zendy; Dziuba E. Z. | Zendy

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Galvanomagnetic Properties of Zn x Hg 1− x Te Solid Solutions

Author(s) -

Niculescu D.,

Dziuba E. Z.

Publication year - 1969

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.19690310203

Subject(s) - hall effect , electrical resistivity and conductivity , solid solution , conductivity , analytical chemistry (journal) , band gap , magnetic field , materials science , condensed matter physics , chemistry , physics , metallurgy , chromatography , quantum mechanics

An investigation is made of the electrical conductivity and the Hall coefficient of Zn x Hg 1− x Te system with x = 0 and x = 0.2 as a function of the temperature and magnetic field in the ranges 77 to 400 °K and 250 to 1000 Gs, respectively. An effect of the “heavy carriers” on the galvanomagnetic properties is found. The additional conductivity due to these “carriers” has a temperature independent value. The energy gap for HgTe is estimated to E g = −0.27 eV and E g = −0.16 eV at the temperatures 77 and 300°K, respectively.

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