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Quenched‐in Electrical Resistivity of Dilute Binary Alloys
Author(s) -
Liu G. C. T.,
Girifalco L. A.,
Maddin R.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690310136
Subject(s) - electrical resistivity and conductivity , materials science , vacancy defect , quenching (fluorescence) , binary number , thermodynamics , impurity , alloy , condensed matter physics , electrical resistance and conductance , chemistry , metallurgy , physics , quantum mechanics , arithmetic , mathematics , organic chemistry , composite material , fluorescence
The quenched‐in electrical resistivity of dilute binary alloys has been calculated, assuming that the alloy system contains single vacancies, di‐vacancies, single solutes (impurities), di‐solutes, and solute—vacancy pairs in an otherwise perfect matrix. Some numerical computations have been made for dilute binary alloys of Au. By assuming that the electrical resistance of a point defect in the paired or associated state is less than that of the unpaired or single state, it is shown that the solutes do have a significant effect on the quenched‐in electrical resistivity if the perturbation introduced into the alloy by the solutes is large. For instance, the change of the binding energy or the concentration of solute‐vacancy pairs will change the slope of the curves in the logarithmic resistivity vs. reciprocal temperature plot and the contribution due to di‐solutes will give rise to a non‐linearity of the curves at lower quenching temperatures. The results are discussed in the light of experimental observations.