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Indirect Energy Gap in GaSe and GaS
Author(s) -
Aulich E.,
Brebner J. L.,
Mooser E.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690310115
Subject(s) - semiconductor , monocrystalline silicon , absorption (acoustics) , band gap , range (aeronautics) , materials science , spectral line , direct and indirect band gaps , phonon , absorption spectroscopy , atomic physics , condensed matter physics , optoelectronics , optics , physics , silicon , astronomy , composite material
Optical absorption measurements on thick monocrystalline samples of GaSe 1− x S x show that in these mixed crystals the lowest energy gap is indirect in the complete range 0 ≦ x ≦ 1. These results are contrary to earlier reports which indicate that GaSe is a direct gap semiconductor. In the case of GaS the absorption spectra allow a tentative identification of the phonons involved in the indirect transition.