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De Haas ‐ Van Alphen and Shubnikov ‐ De Haas Effect in n‐HgSe in Strong Magnetic Fields
Author(s) -
Bliek L. M.,
Landwehr G.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690310113
Subject(s) - condensed matter physics , shubnikov–de haas effect , asymmetry , anisotropy , de haas–van alphen effect , fermi surface , magnetic field , electron , conduction band , physics , chemistry , quantum oscillations , quantum mechanics , superconductivity
The De Haas ‐ Van Alphen and the Shubnikov ‐ De Haas effect are measured on oriented samples of single‐crystalline HgSe with electron concentrations between 1.08 and 3.26 × 10 18 cm −3 in pulsed magnetic fields up to 210 kOe. The results in strong fields show that the beating of the oscillations observed at smaller fields is due to inversion asymmetry splitting rather than to anisotropy of the Fermi surface. A pronounced spin splitting of about 1/4 of a period is observed, allowing the evaluation of the Landé factor of the conduction electrons.