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Influence of the Electron Scattering Anisotropy upon the Phonon Drag Effect in n‐Ge and n‐Si
Author(s) -
Iskra V. D.,
Gostyuk G. T.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690310102
Subject(s) - phonon drag , phonon , condensed matter physics , scattering , boltzmann equation , anisotropy , physics , drag , thermoelectric effect , phonon scattering , electron , transverse plane , relaxation (psychology) , seebeck coefficient , quantum mechanics , mechanics , psychology , social psychology , structural engineering , engineering
The Boltzmann equation is used to study the influence of the scattering anisotropy upon the phonon drag effect in n‐Ge and n‐Si. Assuming the electrons to be scattered mainly by acoustical phonons and the only mechanism of the phonon relaxation to be phonon‐phonon scattering, explicit formulae are obtained for the components of the thermoelectric force tensor due to a single valley as well as for the total thermoelectric force. Composition with the experimental data allows to evaluate both contribution of the transverse phonons to the drag effect and the interaction parameters for the longitudinal and transverse phonons.