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The Effect of Electric Field in a Space Charge Layer on the Photoresponse Edge of Si p‐n Junctions
Author(s) -
Gutkin A. A.,
Janicki T.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680300242
Subject(s) - electric field , space charge , absorption edge , depletion region , electron , layer (electronics) , enhanced data rates for gsm evolution , absorption (acoustics) , condensed matter physics , optoelectronics , materials science , charge (physics) , field (mathematics) , photosensitivity , spectral line , molecular physics , atomic physics , chemistry , physics , optics , semiconductor , nanotechnology , band gap , telecommunications , quantum mechanics , mathematics , computer science , pure mathematics
The influence of the reverse bias on the photoresponse of Si p‐n junctions is investigated in the vicinity of the fundamental absorption edge at room temperature. Besides the increase of photosensitivity caused by the broadening of the space charge layer at electric fields of 10 4 to 10 5 Vcm −1 in the energy region near 1.05 eV an additional increase in the photoresponse is found. Its field dependence is in accordance with the theory given for the change of the absorption coefficient in electric fields (Franz‐Keldysh effect). It is also found that avalanche multiplication of electrons changes the spectra of the relative photoresponse increase at fields higher than 1.1 × 10 5 Vcm −1 .