Premium
Critical Conditions for Transitions between Stationary and Non‐Stationary High‐Field Domains in Semi‐Insulators
Author(s) -
Döhler G.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680300224
Subject(s) - stationary state , oscillation (cell signaling) , condensed matter physics , physics , field (mathematics) , saturation (graph theory) , domain (mathematical analysis) , conductivity , statistical physics , mechanics , mathematical analysis , mathematics , quantum mechanics , chemistry , biochemistry , combinatorics , pure mathematics
An analysis of a fluctuation in the neighborhood of singular points of the Poisson and transport equations for a semi‐insulator with negative differential conductivity due to field enhanced recombination yields a criterion for the transitions between stationary and non‐stationary high‐field domains. Critical voltages (domain lengths) and current oscillation frequencies are given for different saturation currents and agree well with experimental results reported for field‐quenched CdS. It has been shown that, with increasing applied voltage, alternating regimes of stationary and non‐stationary solutions exist for the model discussed, in agreement with recently reported experimental indications.