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Transport Properties of Silver Telluride in the Solid and Liquid States
Author(s) -
van Dong Nguyen,
Tung Pham Ngu
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680300217
Subject(s) - seebeck coefficient , ambipolar diffusion , telluride , materials science , electron mobility , electrical resistivity and conductivity , hall effect , condensed matter physics , melting point , thermoelectric effect , thermodynamics , atmospheric temperature range , semiconductor , bismuth telluride , analytical chemistry (journal) , electron , chemistry , metallurgy , optoelectronics , physics , chromatography , quantum mechanics , composite material
Measurements of the electrical resistivity, Hall coefficient, and thermoelectric power have been carried out for silver telluride over a large temperature range including both solid and liquid states. The analysis of the experimental data shows that in the solid state the transport properties are governed by an ambipolar process with an electron mobility much higher than the hole mobility (μ n = 10 μ p ). It is found that the temperatur dependence of the electron mobility can be represented by a T −3 ‐law. Deviations from the stoichimetric composition of Ag 2 Te have been studied. For all specimens, melting is accompanied by discontinuous variations in the transport propeties. Above the melting point, the magnitude of the measured parameters and their temperature dependence show that liquid silver telluride behaves as a semiconductor. The contribution of Ag + ions to transport phenomena is suggested to account for the behaviour of the electrical properties. Experimental data have been analysed in terms of conventional theories.