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Modulation of Near Infrared Radiation by Acoustoelectric Domains in n‐Type GaAs at Room Temperature
Author(s) -
BocconGibod D.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680300213
Subject(s) - materials science , temperature coefficient , modulation (music) , absorption (acoustics) , attenuation coefficient , radiation , electrical resistivity and conductivity , laser , optoelectronics , enhanced data rates for gsm evolution , anode , optics , absorption edge , time domain , infrared , electrode , chemistry , physics , band gap , acoustics , telecommunications , quantum mechanics , computer science , composite material , computer vision
Optical experiments have enabled measurements of the absorption coefficient of n‐type GaAs to be made at room temperature near the absorption edge by an acoustoelectric domain located at the anode. Moreover, the shape of the domain can be deduced and in addition the acoustic flux is shown to be an important factor in the variations of the absorption coefficient. Some results are also given of local resistivity variations in n‐type GaAs by the injection of free carriers when a GaAs laser beam is focused on the sample.