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Lifetimes of Current Carriers in InP
Author(s) -
Kovalevskaya G. G.,
Slobodchikov S. V.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680300203
Subject(s) - trapping , electron , recombination , electrical resistivity and conductivity , atomic physics , range (aeronautics) , materials science , current (fluid) , chemistry , physics , nuclear physics , ecology , biology , thermodynamics , biochemistry , quantum mechanics , composite material , gene
The lifetimes of electrons and holes in p‐ and n‐type InP are measured in the temperature range 78 to 300°K. Possible mechanisms for the capture and recombination with participation of several trapping centres: E d 2= 0.17 eV, E f 1= 0.04 to 0.06 eV, E f 2= 0.10 eV, are suggested. The considerable effect of trapping at low temperatures is noted. It is found that for low‐resistivity p‐type samples the recombination centres d 2 and the trapping centres f 1 , and for high‐resistivity samples the centres d 2 and f 2 play the dominant role. As result of effective trapping in n‐type as well as in p‐type InP the lifetimes of electrons and holes differ much at low temperatures.