Premium
The Effect of Dislocations on the Intensity Jumps at the Interferential Transmission of X‐Rays near the K‐Edge of Absorption in Ge
Author(s) -
Datsenko L. I.,
Skorokhod M. Ya.,
Vasilkovskii A. S.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680300128
Subject(s) - dislocation , intensity (physics) , reflection (computer programming) , absorption edge , crystal (programming language) , absorption (acoustics) , optics , materials science , diffraction , enhanced data rates for gsm evolution , atomic physics , condensed matter physics , physics , band gap , telecommunications , computer science , programming language
An investigation was made of the effect of dislocations on the intensity jumps i 2 / i 1 near the K‐edge of the absorption of atoms by interference transmission of X‐rays in Ge. The intensities i 2 and i 1 were measured using a single‐crystal spectrometer in the case of Laue diffraction from the planes (111), (110), and (100), respectively, in the long‐ and short‐wave regions near the K‐edge of Ge. An increase of i 2 and a decrease of i 1 with increasing dislocation density N d is observed in the crystal. A linear dependence is found for the logarithm of the intensity jump versus crystal thickness t . It is shown that the slope of the straight line In ( i 2 / i 1 ) = f ( t ) rises with the increase of N d for 220 and 400 reflections. For the 111 reflection such an effect of dislocations was not observed up to N d = 7 × 10 4 cm −2 .