The Effect of Dislocations on the Intensity Jumps at the Interferential Transmission of X‐Rays near the K‐Edge of Absorption in Ge

An investigation was made of the effect of dislocations on the intensity jumps i 2 / i 1 near the K‐edge of the absorption of atoms by interference transmission of X‐rays in Ge. The intensities i 2 and i 1 were measured using a single‐crystal spectrometer in the case of Laue diffraction from the planes (111), (110), and (100), respectively, in the long‐ and short‐wave regions near the K‐edge of Ge. An increase of i 2 and a decrease of i 1 with increasing dislocation density N d is observed in the crystal. A linear dependence is found for the logarithm of the intensity jump versus crystal thickness t . It is shown that the slope of the straight line In ( i 2 / i 1 ) = f ( t ) rises with the increase of N d for 220 and 400 reflections. For the 111 reflection such an effect of dislocations was not observed up to N d = 7 × 10 4 cm −2 .