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Electron Diffraction Contrast from Three Parallel Overlapping Stacking Faults
Author(s) -
Humble P.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680300122
Subject(s) - stacking , contrast (vision) , diffraction , limiting , electron , image contrast , high contrast , physics , optics , nuclear magnetic resonance , quantum mechanics , engineering , mechanical engineering
The electron diffraction contrast to be expected from three parallel overlapping intrinsic stacking faults has been computed. It is shown that faint fringe contrast always arises from this configuration, even in the limiting case when the faults lie on neighbouring slip planes. This is contrary to previous predictions. Moreover, by comparison with experimental images, it is shown that the faint fringe contrast is generally detectable and that the actual spacing of the three faulted planes may be deduced. The effect of dislocation strain‐fields on this faint contrast is discussed and some results for the contrast from two parallel intrinsic stacking faults are presented.