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Effect of Heat Treatments on GaAs Luminescence
Author(s) -
Tuck B.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680290229
Subject(s) - cathodoluminescence , luminescence , photoluminescence , annealing (glass) , vacancy defect , materials science , doping , gallium , line (geometry) , crystal (programming language) , atomic physics , optoelectronics , condensed matter physics , physics , geometry , mathematics , computer science , metallurgy , composite material , programming language
The low photon‐energy luminescence from GaAs, occurring at 1.2 eV at 77 °K has been studied under conditions of photoluminescence and cathodoluminescence. The spectral line was observed from a variety of crystals, doped both n‐ and p‐type. It was found that the emission could be induced by annealing an n‐type crystal at 1000 °C for a few minutes. Its efficiency was shown to be sensitive to Fermi level position. Evidence is also presented that the centre giving rise to the 1.2 eV line may be associated with a gallium vacancy.