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Temperature Dependence of Laser Threshold Current Density and Emission Spectra in Electron‐Beam Pumped Gallium Arsenide Lasers
Author(s) -
Bogdankevich O. V.,
Borisov N. A.,
Krukova I. V.,
Lavrushin B. M.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680290221
Subject(s) - laser , materials science , doping , gallium arsenide , atomic physics , range (aeronautics) , electron , current density , atmospheric temperature range , optoelectronics , optics , physics , quantum mechanics , meteorology , composite material
The basic temperature characteristics of electron‐beam pumped GaAs lasers are investigated for differently doped materials. Some new effects are observed, such as the presence of a gap in the temperature dependence of the photon energy at the threshold and a decrease in the threshold current density with increasing temperature in a certain range in the case of intermediate doping materials, and so on. It is shown that these effects may be related to changes in the mechanism of the laser transitions: for example, for n‐type samples at low temperatures the donor states, and at high temperatures states in the conduction band take part in the transitions. It should be noted also that the laser mechanism depends on doping.