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Effect of Weak Electric Fields on the Absorption Edge in Doped Germanium
Author(s) -
Asnin V. M.,
Eristavi G. L.,
Rogachev A. A.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680290145
Subject(s) - germanium , electric field , doping , enhanced data rates for gsm evolution , absorption edge , coulomb , impurity , absorption (acoustics) , condensed matter physics , materials science , avalanche breakdown , absorption spectroscopy , spectral line , optoelectronics , physics , optics , band gap , breakdown voltage , silicon , voltage , telecommunications , electron , nuclear physics , quantum mechanics , computer science
Results of the investigation of a new effect, the great change in the absorption spectra near the direct band edge of germanium in a relatively weak electric field, are presented. The effect is assumed to be due to the screening of the Coulomb interaction by the carriers which are freed by avalanche breakdown of shallow impurities.