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Change in Electron Affinity of a Semiconductor due to Different Forms of Chemisorption
Author(s) -
Ahmad L.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680290120
Subject(s) - chemisorption , electron affinity (data page) , dipole , semiconductor , electron , ionic bonding , moment (physics) , chemistry , oxygen , surface (topology) , atomic physics , materials science , adsorption , physics , ion , mathematics , molecule , optoelectronics , organic chemistry , geometry , quantum mechanics , classical mechanics
A model has been proposed for the calculation of the variation in electron affinity, with the changes in the degree of surface coverage, for the case where different forms of a given gas species are chemisorbed on a semiconductor surface. This model embodies two parameters, which can be selected to fit the experimental results. It has been applied to the problem of oxygen chemisorption on the deformed (100) BaTiO 3 surface. Neutral and ionic forms of chemisorption are postulated. The dipole moment associated with the neutral form, the higher attainable coverage, and the corresponding change in the electron affinity were found to be ≈ 3.1 D, ≈ 0.54, and ≈ 3.2 eV, respectively.