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Analysis of Point Defect States in Copper II. The Effects of Stage I and Stage III Annealing on Electron‐Irradiation‐Induced Frenkel Pairs
Author(s) -
Dworschak F.,
Schuster H.,
Wollenberger H.,
Wurm J.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680290108
Subject(s) - annealing (glass) , vacancy defect , stage (stratigraphy) , irradiation , electron beam processing , crystallographic defect , materials science , copper , frenkel defect , crystallography , chemistry , metallurgy , physics , nuclear physics , paleontology , biology
The point defect states before and after stage I and stage III annealing are compared by means of 80 °K damage rate measurements. The results can be interpreted most easily by vacancy migration in stage III or more artificially by the conversion of the “stage III interstitial” to a third modification. The stage I annealing results in an at least partial formation of stable di‐interstitials.