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On the Origin of High Photovoltages in Semiconductors
Author(s) -
Zhadko I. P.,
Romanov V. A.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680280239
Subject(s) - semiconductor , crystallite , anisotropy , condensed matter physics , transverse plane , materials science , conductivity , surface photovoltage , optoelectronics , optics , physics , quantum mechanics , engineering , structural engineering , spectroscopy , metallurgy
A new possible mechanism is proposed for explaining the high photovoltage arising in semiconductor films assuming an anisotropic conductivity of the photosensitive crystallites of which the films consist. In this case the high photovoltage is the sum of the elementary transverse Dember photo‐e.m.f.'s. This model may explain practically all peculiarities of the high‐photovoltage effects.