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The Transverse Magnetic Resistance in Semiconductors with Non‐Standard Energy Band
Author(s) -
Askerov B. M.,
Gashimzade F. M.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680280237
Subject(s) - condensed matter physics , degenerate energy levels , effective mass (spring–mass system) , magnetic field , physics , degenerate semiconductor , semiconductor , renormalization , transverse plane , fermi energy , electrical resistivity and conductivity , fermi surface , fermi gas , electron , quantum mechanics , doping , superconductivity , structural engineering , engineering
Abstract The transverse electrical conductivity σ xx in a strong magnetic field is calculated for semiconductors with spherical but nonparabolic energy band. The calculation is carried out for the case of electron scattering by acoustical phonons. In the quantum limit non‐degenerate and degenerate semiconductors are considered. It is shown that in the formula for the transverse electrical conductivity in the non‐degenerate case the effective mass at the bottom of the parabola shifted by the magnetic field and in the degenerate case the effective mass at the Fermi surface are included. The temperature dependence is the same as for a standard energy band. Therefore an assumed non‐parabolicity does not change the dependence of σ xx on the electrical field. The effect of the non‐parabolicity is reduced to the above renormalization of the effective mass.