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Conductivity of Intrinsic InSb in High Electric Fields
Author(s) -
Weissglas P.,
Blötekjaer K.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680280230
Subject(s) - polar , electric field , scattering , impact ionization , condensed matter physics , semiconductor , charge carrier density , conductivity , ionization , field (mathematics) , physics , electrical resistivity and conductivity , materials science , chemistry , optoelectronics , optics , quantum mechanics , mathematics , ion , doping , pure mathematics
Abstract A theory is developed for the carrier transport properties and impact ionization rate in an intrinsic polar semiconductor with high carrier density. Polar scattering prevails in weak fields but it is shown that intercarrier interactions become important at higher field strengths. The carrier concentration is found to vary approximately exponentially with applied field. Numerical results for data representative of InSb are presented.