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Stability of Surface‐Barriers in Semiconductors
Author(s) -
Fazakas A. B.,
Handel P. H.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680280229
Subject(s) - stability (learning theory) , semiconductor , surface (topology) , field (mathematics) , materials science , order (exchange) , condensed matter physics , physics , mathematics , optoelectronics , geometry , computer science , pure mathematics , finance , machine learning , economics
In order to test a recently proposed recurrence method for studying the stability of the semiconductor surface‐barrier, we apply it to the currentless state up to second order. We obtain the expected stability at arbitrary values of the surface potential. Furthermore, we investigate the stability in the presence of an applied electrical field at sufficiently small values of the surface potential and restrict ourselves to the first order calculation. The obtained critical field exceeds the breakdown value. Thus, at least for small values of the surface potential (| V8 | ≤ 0.75 kT ) stability prevails.