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On the Problem of Recombination Autooscillations
Author(s) -
Bonchbruevich V. L.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680280227
Subject(s) - excitation , impurity , semiconductor , doping , recombination , stability (learning theory) , sample (material) , condensed matter physics , physics , materials science , chemistry , optoelectronics , quantum mechanics , thermodynamics , computer science , biochemistry , machine learning , gene
The conditions are studied under which autooscillations of the concentration of free carriers may take place. A unipolar semiconductor sample is considered containing besides the standard doping impurity some traps of one or of two types. The criteria of the soft self‐excitation of the oscillations in question are stated explicitly, together with the conditions of the fluctuational stability of the system. The decisive role of extrinsic illumination is pointed out.