Premium
Cyclotron Resonance of Holes in Si
Author(s) -
Ownerpetersen M.,
Samuelsen M. R.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680280123
Subject(s) - valence band , cyclotron resonance , semiconductor , electronic band structure , semimetal , condensed matter physics , atomic physics , physics , valence (chemistry) , cyclotron , materials science , magnetic field , band gap , quantum mechanics
Hole resonances are studied in 3900 Ωcm p‐type Si samples at temperatures from 1.2 to 5.0 ° K. Measurements are performed at 45 GHz using magnetic inductions B up to 10 kG corresponding to a maximum value of m * / m 0 = 0.62, and a few resonances not reported previously are observed. The experimental data are in reasonably good agreement with the Luttinger theory [1] of Landau levels in the valence band of semiconductors when a suitable set of band parameters are chosen. Numerical calculations of the levels and the matrix elements for transitions between the levels are carried out for B pointing in the crystallographic directions [001], [111] and [110]. The variation of the level positions and of the matrix elements as a function of the band parameters is examined in order to find the parameters providing the best fit to the experimental data.