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Electrical and Optical Properties of Sputtered In 2 O 3 films. II. Optical Properties in the Near Infrared
Author(s) -
Müller H. K.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680270230
Subject(s) - infrared , scattering , electron , anisotropy , free electron model , dispersion (optics) , materials science , absorption (acoustics) , thermal conduction , electron scattering , conduction band , range (aeronautics) , free carrier absorption , condensed matter physics , optics , physics , optoelectronics , semiconductor , quantum mechanics , composite material
The influence of conduction electrons on the optical properties in the near infrared has been investigated for sputtered In 2 O 3 films. The results are interpreted using the present theories of absorption and dispersion by free carriers. The optical properties in the investigated frequency range are considerably influenced by the anisotropy of the predominant scattering mechanism (scattering at charged defect centres) and by the low mean free time of the electrons (τ ≈ 1.5 × 10 −15 s).