Premium
Electrical and Optical Properties of Sputtered In 2 O 3 films. I. Electrical Properties and Intrinsic Absorption
Author(s) -
Müller H. K.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680270229
Subject(s) - thermal conduction , scattering , materials science , electron , sputtering , lattice (music) , electrical conduction , absorption (acoustics) , condensed matter physics , electrical resistivity and conductivity , thin film , electron scattering , analytical chemistry (journal) , chemistry , optics , nanotechnology , composite material , physics , quantum mechanics , chromatography , acoustics
Thin films of n‐conducting In 2 O 3 are prepared by reactive sputtering. The concentration of conduction electrons is changed by a heat treatment between n e = 10 17 and 10 20 cm −3 ( T = 300°K). Concentration and temperature dependence of the electron mobility indicate an intense scattering at charged imperfection centres which are due to a considerable intrinsic lattice disorder. The intrinsic absorption is also influenced by this disorder.