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On the Reverse‐Biased Capacitance of Step p + ‐n Junctions with Traps
Author(s) -
Auth J.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680270222
Subject(s) - capacitance , diffusion capacitance , trap (plumbing) , depletion region , reverse bias , atomic physics , electron , physics , poisson distribution , materials science , chemistry , analytical chemistry (journal) , optoelectronics , mathematics , electrode , quantum mechanics , semiconductor , statistics , diode , meteorology , chromatography
The steady‐state occupation of multiple chargeable deep trap levels of a depletion‐layer is calculated. Using this result, the capacitance of reverse‐biased p + ‐n step junctions with traps is obtained by integration of the Poisson equation. It is shown that measurements of the ac and dc capacitance of the p‐n junction with traps and of the capacitance of an equivalent junction without traps give some information about the capture cross‐section ratios for electrons and holes of the trap levels.