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Mössbauer Experiments with Coulomb‐Excited 73 Ge after Coulomb Recoil Implantation
Author(s) -
Zimmermann B. H.,
Jena H.,
Ischenko G.,
Killan H.,
Seyboth D.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680270221
Subject(s) - recoil , excited state , atomic physics , germanium , coulomb excitation , effective nuclear charge , coulomb , physics , ion , nuclear reaction , nuclear physics , silicon , electron , optoelectronics , quantum mechanics
The nuclear resonance absorption of the 67.03 keV de‐excitation radiation of 73 Ge * , Coulomb‐excited by 20 to 30 MeV 16 O ions, is studied. The recoiling 73 Ge ° nuclei are implanted into a chromium substrate. The electronic configurations Ge (4s 1 p 3 ) in Ge (cryst.), Ge (15% (4s 2 p 0 ), 85% (4s 2 p 2 )) in Ge (II)Se, Ge (62% (4s 0 p 0 ), 38% (4s 1 p 3 )) in GeO 2 (hex.) and GeO 2 (tetr.), and the ratio δ R/R =1.12 × 10 −3 of the nuclear charge radius are compatible with the measured isomeric shifts. Line broadenings and recoil‐free fractions f of the implantation target and the absorbers are determined. At 78 °K f GeO 2 (tetr.)is greater than f GeO 2 (hex.)by a factor of six.