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Depth Distribution Measurements Using Bombardment‐Enhanced Solubility
Author(s) -
Jech Č.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680270214
Subject(s) - mica , materials science , dissolution , silicon , layer (electronics) , neutron activation analysis , recoil , semiconductor , ion , planar , radon , solubility , analytical chemistry (journal) , radiochemistry , chemistry , atomic physics , composite material , optoelectronics , nuclear physics , physics , computer graphics (images) , organic chemistry , chromatography , computer science
A method is described which enables thin, uniform layers to be sectioned off from the surfaces of insulators and semiconductors. It is based on the formation of bombardment‐induced disorder in a layer of definite thickness by low‐energy ion bombardment and subsequent dissolving the disordered layer in a suitable solvent. The thickness of the layer thus removed after various times and conditions of ion bombardment is determined for silicon and mica using neutron activation analysis. The method is applied for determining the depth distribution of radon decay products injected by recoil from a planar radon source into mica.