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Generation‐Recombination Statistics in Semiconductors‐A Model with Two Centres
Author(s) -
Friedrich H.,
Jungk G.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680270125
Subject(s) - recombination , semiconductor , absorption (acoustics) , statistics , physics , statistical physics , materials science , atomic physics , mathematics , optics , biology , optoelectronics , genetics , gene
Equations of recombination statistics for a model with two recombination centres are studied using various approximations. Variation of the non‐equilibrium concentration caused by additional irradiation with light from the extrinsic absorption region can be explained by this model.