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Low‐Field Magnetoresistance and Magnetoconductivity in n‐Type Ge with Dislocations
Author(s) -
van Weeren J. H. P.,
Struikmans R.,
Koopmans G.,
Blok J.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680270124
Subject(s) - magnetoresistance , condensed matter physics , bent molecular geometry , conductivity , materials science , anisotropy , type (biology) , magnetic field , physics , optics , composite material , quantum mechanics , ecology , biology
Expression are derived for specified magnetoresistance and magneto‐conductivity coefficients for n‐type Ge with an array of parallel dislocations. The obtained equations are compared with measurements at 77°K on plastically bent n‐type Ge. From the results we conclude that the electron mobility is not reduced by the dislocations for N disl. < 2 × 10 7 cm −2 . The observed anisotropies in the conductivity can be attributed to the inhomogeneous distribution of the dislocations.