Premium
Electron Injection into a p‐Type Semiconductor
Author(s) -
Roberts G. G.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680270122
Subject(s) - ohmic contact , semiconductor , space charge , indium , materials science , electron , condensed matter physics , electrode , voltage , current (fluid) , diffusion , current density , optoelectronics , physics , thermodynamics , quantum mechanics
The problem of minority carrier space charge injection is considered. Diffusion effects are included in the theory and numerical results are presented for electron injection into a p‐type semiconductor. The resulting current‐voltage characteristic shows ohmic behaviour preceding a region in which the current density becomes proportional to the square root of the applied voltage and independent of the specimen thickness. Experimental d.c. characteristics of single crystal trigonal selenium with evaporated indium electrodes show a sub‐ohmic behaviour in accord with the theory mentioned above.