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On Electron Mirror Microscopic Observations of the Details of p‐n Junction Regions in Si
Author(s) -
Igras E.,
Warmińaski T.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680270106
Subject(s) - electron , ion , electric field , silicon , lithium (medication) , materials science , irradiation , condensed matter physics , saturation (graph theory) , atomic physics , molecular physics , chemistry , physics , optoelectronics , medicine , mathematics , organic chemistry , quantum mechanics , combinatorics , nuclear physics , endocrinology
Electron mirror microscopic observations of lithium p‐n and p‐i‐n junctions in Si show that the contrast of the junction boundary strongly decreases after being irradiated with electrons. Simultaneously the process of saturation with lithium of the micro‐cracks present on the surface in the neighbourhood of the junction line is observed. The observed process is interpreted in terms of the field extraction of lithium ions from the deeper lying positions into the surface. The electric field responsible for the extraction of lithium ions originates from the electrons impinging on a high resistive solid polymer film formed on the crystal in the course of observation. A similar process, though with slower rate, was observed on p‐n junctions obtained by the diffusion of aluminum into n‐type silicon.