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Negative Magnetoresistance in p‐CdSb
Author(s) -
Andronik I. K.,
Arushanov E. K.,
Emelyanenko O. V.,
Nasledov D. N.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680270103
Subject(s) - magnetoresistance , condensed matter physics , germanium , impurity , magnetic field , materials science , atmospheric temperature range , tin , thermal conduction , chemistry , ferromagnetism , physics , thermodynamics , metallurgy , silicon , organic chemistry , quantum mechanics , composite material
Negative magnetoresistance is observed at low temperatures in cadmium antimonide crystals with hole concentration ≦ 5 × 10 16 cm −3 . The results of the investigation of the field, angular and temperature dependences in the temperature range 2.2 to 77°K of the magneto‐resistance of copper, silver, germanium, and tin doped samples with carrier concentrations ranging from 10 16 to 10 18 cm −3 are described. It is shown that the negative magnetoresistance is related probably to impurity band conduction. It is noted that the regularities observed, namely the quadratic dependence of the negative magnetoresistance on magnetic field strenght at weak fields and saturation at strong fields, the linear change of the negative magnetoresistance with temperature and the isotropy of the effect have the same character as in A IV and A III B V crystals and conform qualitatively Toyozawa's theory.