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Influence of Impurities on Dislocation Velocities Controlled by Jog‐Dragging
Author(s) -
Messerschmidt U.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680260235
Subject(s) - impurity , dislocation , condensed matter physics , slip (aerodynamics) , ionic crystal , ionic bonding , materials science , thermal , physics , thermodynamics , ion , quantum mechanics
The dislocation velocities in ionic crystals can be interpreted by the jog‐dragging mechanism in the low velocity range. At the initial slip stage part of the thermal jogs is transferred into a nonconservative moving configuration. This process is affected by impurity‐pinning points. Thus, the mean distance l between nonconservative jogs is defined by the impurity concentration c p as l = const b c p −1/2 . The dependence of the dislocation velocity of ionic crystals on stress, temperature, and impurity content can be explained by this concept and agrees well with experimental data published in the literature.