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On the trap distribution in thin films of copper phthalocyanine
Author(s) -
Hamann C.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680260132
Subject(s) - trap (plumbing) , semiconductor , isotropy , copper , materials science , copper phthalocyanine , organic semiconductor , electron , phthalocyanine , thin film , condensed matter physics , atomic physics , physics , optoelectronics , optics , nanotechnology , quantum mechanics , meteorology , metallurgy
Thin films of copper phthalocyanine are found to be intrinsic semiconductors with an energy gap of 1.98 eV. Their electric properties at high fields are determined by an exponential trap distribution. The form of the distribution and its parameters are determined by SCLC‐measurements, the discret character of the trap level spectrum by back current measurements. All results may be interpreted by assuming a model of an isotropic nondegenerate semiconductor whose effective hole mobility is higher than the effective electron mobility.