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Charge compensation of trapped holes in silver bromide
Author(s) -
Buroff A.,
Malinowski J.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680260128
Subject(s) - silver bromide , materials science , ion , trapping , valence band , bromide , valence (chemistry) , range (aeronautics) , atmospheric temperature range , condensed matter physics , atomic physics , molecular physics , analytical chemistry (journal) , chemistry , optoelectronics , band gap , silver halide , inorganic chemistry , nanotechnology , thermodynamics , layer (electronics) , physics , composite material , organic chemistry , chromatography , ecology , biology
The temperature dependence of the hole photoresponse in silver bromide single crystals is measured in the temperature range 200 to 300°K. The bulk lifetime of photoexcited holes is shown to pass through a minimum at temperatures where the drift mobility exhibits a maximum value. The analysis of the experimental results suggests that the lifetime of holes is limited by a neutralization process, presumably by silver ion vacancies, preceded by multiple trapping at a level 0.41 eV above the valence band. The proposed scheme is in accordance with other experimental results concerning the properties of holes in silver bromides.