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N‐ and S‐type negative resistances and relaxation oscillations in Au‐doped double injection Ge diodes
Author(s) -
Hennig H.P.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680260123
Subject(s) - negative resistance , diode , doping , materials science , relaxation (psychology) , optoelectronics , condensed matter physics , voltage , electrical engineering , physics , social psychology , engineering , psychology
In the course of investigations of Au‐doped double injection Ge diodes with a 0.15 eV level partially populated at thermal equilibrium, a voltage‐controlled negative resistance was observed below 65°K before the current‐controlled S‐type negative resistance occurring with DI diodes becomes important. The creation of N‐type negative resistance can be explained by an occupation of the 0.2 eV gold level, while the generation of oscillations must be related to the creation of the S‐type negative resistance [5].