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Climb of extrinsic faults in silicon
Author(s) -
Dash S.,
Joshi M. L.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680260115
Subject(s) - climb , silicon , stacking , stacking fault , annihilation , materials science , condensed matter physics , partial dislocations , hexagonal crystal system , fault (geology) , diffusion , crystallography , dislocation , optoelectronics , composite material , geology , chemistry , physics , seismology , nuclear magnetic resonance , thermodynamics , quantum mechanics
Frank hexagonal loops, extrinsic stacking faults, and misfit dislocations can be generated through diffusion of very high concentrations of As in silicon. If a thin film of silicon containing such extrinsic faults and dislocations is quenched, the quenched‐in vacancies annihilate the stacking faults at the locations where dislocations approach the faults. This paper discusses the probable mechanism of such fault annihilation.