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Hot electron mobility in polar semiconductors
Author(s) -
Licea I.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680260110
Subject(s) - electron , polar , momentum (technical analysis) , semiconductor , hot electron , physics , scattering , energy–momentum relation , energy exchange , condensed matter physics , atomic physics , quantum electrodynamics , quantum mechanics , atmospheric sciences , finance , economics
The mobility of “warm” and “hot” electrons in polar semiconductors with a non‐parabolic energy band ns that of n‐type InSb is studied theoretically by means of energy and momentum conservation equations. The calculations are carried out assuming only optical polar scattering for the case that the energy and momentum exchange is controlled by interelectronic collisions. A comparison with the parabolic case and a discussion on the validity of the model are made. The accounting of non‐parabolicity for hot electrons implies that the breakdown is not predicted.