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Minority carriers in zinc sulphide
Author(s) -
Friedrich H.,
Sysoev L. A.,
Thiessen K.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680260109
Subject(s) - surface photovoltage , doping , photoconductivity , photoluminescence , excitation , materials science , zinc , photoluminescence excitation , charge carrier , spectral line , absorption spectroscopy , analytical chemistry (journal) , optoelectronics , optics , chemistry , spectroscopy , physics , metallurgy , quantum mechanics , chromatography , astronomy
Photovoltage and photoconductivity measurements were made in non‐intentionally doped and Cu diffusion‐doped ZnS crystals grown from melt. under high pressure. The photovoltage measurements allow the excitation of minority carriers to be detected. Whereas in the non‐intentionally doped samples minority carriers are generated only by irradiation in the fundamental lattice absorption range, in Cu‐doped crystals an excitation of holes is observed down to 2.5 eV. The hole lifetimes at fundamental lattice excitation have values of 10 −10 to 10 −12 s in Cu‐doped samples, in the undoped samples they are greater than 10 −10 s. The photovoltage spectra are similar to the excitation spectra of photoluminescence.