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High‐temperature modifications of the semiconductor compounds CdSnAs 2 and CdGeAs 2
Author(s) -
Osmanov E. O.,
Rud Yu. V.,
Stryalkovskii M. E.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680260106
Subject(s) - sphalerite , materials science , thermal conductivity , electrical resistivity and conductivity , semiconductor , crystal structure , indentation hardness , conductivity , analytical chemistry (journal) , phase (matter) , thermal , mineralogy , crystallography , chemistry , thermodynamics , metallurgy , microstructure , composite material , optoelectronics , quartz , physics , chromatography , organic chemistry , quantum mechanics
The results are considered of a comparative investigation of the properties of CdSnAs 2 and CdGeAs 2 compounds with the usual chalkopyrite‐type structure and with their high temperature modifications. Results are given for the changes which occur in the microhardness, electrical properties, and thermal conductivity as a result of the phase changes. It is found that the electron mobility in CdSnAs 2 with the sphalerite‐type structure is less than half that of crystals with the usual structure. The thermal conductivity of vitreous CdGeAs 2 (5.5 × 10 −3 W/cm.deg) is about an order less than for a single crystal (68.6x × 10 −3 W/cm.deg).
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