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Electron temperature in polar semiconductors
Author(s) -
Licea I.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680250144
Subject(s) - electron , semiconductor , polar , scattering , condensed matter physics , physics , dispersion (optics) , momentum (technical analysis) , electric field , atomic physics , quantum electrodynamics , quantum mechanics , economics , finance
Using the electron temperature approximation an analysis is made of the scattering integral in an intense electric field for a semiconductor with an arbitrary non‐parabolic energy band. The electron temperature is then derived for a purely polar semiconductor with a non‐parabolic dispersion law such as n‐type InSb. The calculations only include optical phonon scattering and assume that both energy and momentum exchange is controlled by interelectronic collisions. The problem is treated for “warm” and “hot” electrons and a comparison with the parabolic case is made.