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Piezoelectricity in iii‐v compounds with a phenomenological analysis of the piezoelectric effect
Author(s) -
Arlt G.,
Quadflieg P.
Publication year - 1968
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19680250131
Subject(s) - piezoelectricity , displacement (psychology) , ionic bonding , phenomenological model , materials science , condensed matter physics , strain (injury) , lattice (music) , piezoelectric coefficient , metal , chemistry , ion , composite material , physics , metallurgy , acoustics , medicine , psychology , organic chemistry , psychotherapist
The piezoelectric stress constants e 14 of InSb, InAs, GaSb, GaAs, and AlSb have been measured at room temperature and found to be 0.071; 0.045; 0.13; 0.16, and 0.068 C/m 2 respectively. If the III‐V compound crystals are expanded in the direction, the A‐faces (metal atoms) become negatively charged, in contrast to II‐VI compounds, in which the equivalent faces become positively charged. Using a model of a layered lattice, we show that three different mechanisms may contribute to the piezoelectric effect. These mechanisms are 1. the internal displacement of the ionic charge, 2. the internal displacement of the electronic charge. 3. the change in ionicity due to strain.