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On the Nature of Oscillations in Impurity Photoconductivity Spectra of Ge
Author(s) -
Besfamilnaya V. A.,
Elesin V. F.,
Kueova I. A.,
Ormont N. N.,
Ostboborodova V. V.
Publication year - 1967
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19670240238
Subject(s) - phonon , relaxation (psychology) , impurity , photoconductivity , condensed matter physics , germanium , carrier scattering , photon energy , charge carrier , spectral line , scattering , atomic physics , photon , physics , materials science , optics , silicon , optoelectronics , quantum mechanics , psychology , social psychology
A theoretical analysis is given which considers the strong dependence of lifetime on the carrier energy, the impurity scattering, and the very short relaxation time τ op of the “hot” photocarriers due to optical phonons. The carrier energy is always smaller than the optical phonon energy and jumps from this value to nearly zero if the photon energy minus carrier ionizationsenergy is increased from just below to just above a multiple of the optical phonon energy. The main assumption made is that the lifetime of the carriers in this energy interval is solely determined by the relaxation time τ ac due to the acoustic phonons; the relaxation time with the equilibrium carriers τ re and the lifetime rr of “cold” carriers being much greater. The relative depth η of the oscillations is calculated and is in good agreement with experiments on Ga‐doped p‐type germanium at 7 °K.