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Forward Current Injection Modulation of Photocurrent in p‐n Heterojunctions
Author(s) -
Tansley T. L.
Publication year - 1967
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19670240224
Subject(s) - photocurrent , heterojunction , thermalisation , optoelectronics , conduction band , electron , biasing , dark current , population , current (fluid) , materials science , modulation (music) , voltage , condensed matter physics , physics , chemistry , atomic physics , photodetector , medicine , environmental health , quantum mechanics , acoustics , thermodynamics
The effect of applied forward bias upon the photocurrent observed in p‐n heterojunctions has been investigated in the systems GaAs‐Ga(AsP) and (GaIn)As‐GaAs. In all the heterodiodes measured the photocurrent was found to cut‐off sharply at a well defined bias and this cut‐off voltage proved extremely sensitive to temperature. The observation that the excess photocurrent is simply related to the dark‐current leads to a model in which photo electrons may rapidly thermalize in the conduction band notch if the equilibrium injected population is sufficiently large.