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Studies on the Nature of CdS Single Crystal Sensitization by Etching
Author(s) -
Sheinkman M. K.,
Tyagai V. A.,
Snitko O. V.,
Ermolovich I. B.,
Belenky G. L.,
Nbondakenko V.
Publication year - 1967
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19670240217
Subject(s) - photoelectric effect , photoconductivity , etching (microfabrication) , recombination , crystal (programming language) , luminescence , sensitization , materials science , photochemistry , optoelectronics , vacancy defect , single crystal , chemistry , crystallography , nanotechnology , biochemistry , layer (electronics) , biology , computer science , immunology , gene , programming language
The sensitizing of CdS single crystals by etching in a KOH (NaOH) solution is investigated by several photoelectric and luminescence methods. It is shown that the sensitizing is mainly due to the creation of slow sensitizing r‐centres of recombination with parameters identical to those of recombination centres in naturally photoconductive crystals. Two mechanisms are proposed to explain the sensitizing and these take into account the dif‐fusion of vacancy complexes and hydroxyle groups.