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Study of GaSb Valence Band by Magnetoresistance and Hall Effect Measurements at Low Temperature
Author(s) -
Pistoulet B.,
Robert J. L.,
Marques M.
Publication year - 1967
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19670240210
Subject(s) - condensed matter physics , hall effect , magnetoresistance , valence band , isotropy , effective mass (spring–mass system) , transversal (combinatorics) , valence (chemistry) , materials science , magnetic field , physics , band gap , optics , quantum mechanics , mathematics , mathematical analysis
The presence of light and heavy holes in GaSb has been pointed out by Becker et al.[1] and values of their effective masses have been obtained by various authors [2,3,4]. A study is made here of the Hall effect, and the longitudinal and transversal magnetoresistance of p‐type GaSb crystals at 4.2 °K, from 0 to 33 kG. Assuming that depopulation of the light‐hole band by the field is mainly responsible for the variation of the Hall coefficient and considering isotropic bands tangential at k (000), the densities, mobilities, and effective masses of the two species of holes are deduced.