Premium
A Method of Measuring Effective Electron Mass in Thin Insulating Films
Author(s) -
Antula J.
Publication year - 1967
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19670240109
Subject(s) - electron , effective mass (spring–mass system) , materials science , thin film , capacitance , schottky diode , schottky barrier , condensed matter physics , optoelectronics , nanotechnology , chemistry , electrode , physics , classical mechanics , quantum mechanics , diode
MA method is proposed for calculating the electron effective mass in thin insulating films (less than 100 Å) from the tunnel‐ and Schottky currents. In this method the slope of the Schottky characteristic provides the effective film thickness, and the slope of the tunnel characteristic leads to the electron effective mass. It is shown that, for uneven films, this method may provide better results than the calculation using the capacitance film thickness. The method is used to calculate the electron effective mass in a thin Ta 2 O 5 film.