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Photoconductivity Oscillations in InP
Author(s) -
Kovalevskaya G. G.,
Nasledov D. N.,
Slobodchikov S. V.
Publication year - 1967
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19670230238
Subject(s) - photoconductivity , phonon , photon , range (aeronautics) , physics , transverse plane , photon energy , atomic physics , energy (signal processing) , condensed matter physics , optics , materials science , quantum mechanics , structural engineering , engineering , composite material
The oscillatory photoconductivity effect is found in n‐ and p‐type InP ( n = 2 × 10 15 cm −3 , p = 10 14 cm −3 at T = 300 °K) at 4.2 °K for the incident photon energy range 1.4 to 2.6 eV. The oscillations are the result of a strong interaction not only with longitudinal (in the photon range 1.4 to 1.58 eV) but also with the transverse (in the photon range 1.58 to 1.71 eV) optical phonons. For the incident photon range 1.7 to 2.6 eV the photoconductivity oscillations are considered to be connected with the emission of two phonons, probably TO( x ) + TA( x ). A possible explanation of the results is given. The interaction with the transverse mode is considered to arise from the fact that the constant‐energy surfaces in k ‐space are not spherical and from the contribution of U‐processes.