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Cathodoluminescence Yields in Highly Excited CdS
Author(s) -
Egorov V. D.,
Müller G. O.,
Weber H. H.
Publication year - 1967
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19670230232
Subject(s) - cathodoluminescence , excited state , lasing threshold , atomic physics , exciton , excitation , wavelength , quantum yield , materials science , yield (engineering) , radiation , stimulated emission , electron , luminescence , laser , fluorescence , optoelectronics , optics , physics , condensed matter physics , quantum mechanics , metallurgy
An inner energy yield between 0.15 and 0.35 is obtained for the exciton emission, 489 and 493 nm, of CdS crystals at liquid nitrogen temperature under pulsed 9 ke V electron excitation at a pair‐production rate of about 10 25 cm −3 s −1 below the lasing threshold. The CdS crystals were grown without deliberate doping. Emission at other wavelengths is less than 10%; the angular dependence of the radiation is of the form expected from classical optics. According to available experimental and theoretical data the pair‐production energy is equal to about three times the energy gap, hence the observed maximum energy yields correspond to a quantum yield of one. Therefore it would be expected that the transition to stimulated emission should be accompanied only by a spatial and spectral redistribution and not by an increase in efficiency.